METHOD OF FABRICATION SEMICONDUCTOR DEVICE FOR PREVENTING RESIDUE IN MOAT REGION

摘要

As for the present invention is to provide a process for the production of a semiconductor device suitable for a gate electrode layer prevents plasma damage caused by plasma dry etching method is applied for removing a lacy dew how to remain in the Motor agent, a trench for device isolation in a semiconductor substrate forming, comprising as buried in the trench to form a device isolation film that fluffs agent occurs, the method comprising: forming an insulating film on the semiconductor substrate to fill the Motor root of the device isolation film, the fluffs formed through the front wet etching process forming agent the insulating film Motor agent filled film with filling, forming on the semiconductor substrate including the Motor agent film filling the gate oxide film and the gate electrode layer in order, and forming a gate electrode by etching the gate electrode layer It includes.