FABRICATION METHOD OF HBT MMIC USING DIELECTRIC LIFT-OFF

摘要

It presents: (MMIC Monolithic Microwave Integrated Circuit) manufacturing method: off (lift-off) a heterojunction bipolar transistor utilizing-insulating lift (Heterojunction Bipolar Transistor HBT) microwave single integrated circuit substrate. In the present invention, deposition after forming the inverted pattern shape of the photoresist pattern to form the integral via (via) on the production of the HBT MMIC, the high-quality insulating film at a low temperature. Such Next, the photoresist pattern and the insulating film at the same time, the lift-off is opened by a via. By doing so, it is possible to minimize the current gain decreases as compared with the conventional insulating film was formed in a via in the insulating film deposition process and an etching process of a high temperature.