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RETICLE INSPECTION METHOD USING WAFER TEST APPARATUS
RETICLE INSPECTION METHOD USING WAFER TEST APPARATUS
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机译:使用晶片测试装置的光罩检查方法
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摘要
The present invention is a reticle inspection method using the wafer inspection equipment for inspecting a defect that can be generated in the modification process of the reticle by using the unmodified reticle used using the modified reticle and the field formed on the wafer compared to the field formed gender wafer It discloses.; Reticle inspection method using the wafer inspection device according to the invention, by analyzing the pattern formed on the wafer, and using the wafer inspection equipment for inspecting a defect on the reticle, but forming a field containing a plurality of dies on the wafer, corrected the formed using a non-first reticle 1 field, a wafer of the second field, formed by using a second reticle modified to reflect the wafer process analysis result using the first reticle is formed to be repeated in one direction the first step to go through the process and by the wafer process is achieved by having a second step of the test patterns between the second field and the first field is formed on the wafer.
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