METHOD FOR SETTLEMENT OF ETCHING TIME OF PATTERN BY PATTERN DENSITY

摘要

The present invention relates to a pattern etching time setting process according to the pattern density that can form a pattern having a uniform size over the substrate surface by controlling the etching time of the etching layer, according to the pattern density of the substrate,; Pattern etching time setting process according to the pattern density in accordance with the present invention comprises the etching layer formed on a semiconductor substrate calculating the ratio of the pattern density occupied by the substrate total area; and, determine the relationship between said pattern density than CD bias the method comprising; and, wherein the pattern density is higher than 10 to 15% applied for a long time of etching time than the normal etching time, and applying the ordinary time shorter than the etching time if the pattern density is lower than 10 to 15% and characterized by comprising comprises a.