Method for settlement of etching time of pattern by pattern density

摘要

The invention prey by adjusting the etching time according to the pattern density of each layer of the substrate over the entire surface of the substrate relates to a pattern etching time setting method according to the pattern density that can form a pattern with a size of , ; pattern etching time setting method according to the density pattern according to the present invention is formed on a semiconductor substrate prey each layer comprising a pattern density occupied by calculating the ratio of the total area in the substrate ; and the step of identifying a relationship between the pattern density than CD bias ; and , the pattern density is greater than the normal etching time is higher than 10-15% apply the etching time of the time and is characterized in that the pattern density comprises the step of applying a short time than a normal etching time is lower than the 10~15%.