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SEMICONDUCTOR INTEGRATED CIRCUITS EMPLOYING STACKED NODE CONTACT STRUCTURES AND STACKED THIN FILM TRANSISTORS AND METHODS OF FABRICATING THE SAME
SEMICONDUCTOR INTEGRATED CIRCUITS EMPLOYING STACKED NODE CONTACT STRUCTURES AND STACKED THIN FILM TRANSISTORS AND METHODS OF FABRICATING THE SAME
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机译:采用积层节点接触结构和积层薄膜晶体管的半导体集成电路及其制造方法
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摘要
Semiconductor integrated circuits that include thin film transistors (TFTs) and methods of fabricating such semiconductor integrated circuits are provided. The semiconductor integrated circuits may include a bulk transistor formed at a semiconductor substrate and a first interlayer insulating layer on the bulk transistor. A lower TFT may be on the first interlayer insulating layer, and a second interlayer insulating layer may be on the lower TFT. An upper TFT may be on the second interlayer insulating layer, and a third interlayer insulating layer may be on the upper TFT. A first impurity region of the bulk transistor, a first impurity region of the lower TFT, and a first impurity region of the upper TFT may be electrically connected to one another through a node plug that penetrates the first, second and third interlayer insulating layers.
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