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An activator, An activator solution, a slurry system and a polishing process for chemical mechanical polishing metal layers

机译:用于化学机械抛光金属层的活化剂,活化剂溶液,浆料系统和抛光工艺

摘要

This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.
机译:本发明涉及用于半导体制造的CMP浆料系统。浆料系统包括两部分。第一部分是通用分散体,仅包含研磨剂,并可选地包含表面活性剂和稳定剂。通用分散体可用于抛光金属以及层间电介质(ILD)。第二部分是新颖的活化剂溶液,其包含选自以下的至少两种组分:氧化剂,酸,胺,螯合剂,含氟化合物,缓蚀剂,缓冲剂,表面活性剂,生物剂及其混合物。

著录项

  • 公开/公告号KR100473442B1

    专利类型

  • 公开/公告日2005-03-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20017005085

  • 发明设计人 마훌리카딥팩;

    申请日2001-04-23

  • 分类号H01L21/304;

  • 国家 KR

  • 入库时间 2022-08-21 22:04:08

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