Orifice type Gas Sensor using CVD DLC Thin Film and Fabrication Method for the same

摘要

PURPOSE: An orifice type gas sensor and a method for manufacturing the same are provided to enlarge an effective gas contact area by dynamically managing a flow of gas fluid. CONSTITUTION: An orifice type gas sensor includes a first silicon wafer(24), a DLC layer(22), metal layers(25,26), an insulation layer(23), n+ electrodes(20,21), an epoxy layer(27), an insulation layer(23') and a second silicon wafer(24'). The first silicon wafer(24) has a narrow upper portion and a wide lower portion. The DLC layer(22) is formed on an inclined surface and a lower surface of the first silicon wafer(24). The insulation layer(23) is formed between the metal layers(25,26) and the first silicon wafer(24). The n+ electrodes(20,21) are formed on a contact point between the DLC layer(22) and the metal layers(25,26).