PURPOSE: An ultrafast semiconductor photoconductive switching device and method for manufacturing the same are provided to generate a high speed electrical pulse of pico seconds and femto seconds by making the back surface of a substrate lapped to several tens of micrometers in thickness and by forming a transmission line of a micro strip type in which a suitable quantity of ions are implanted and an amorphous semiconductor is used as a photoconductive layer. CONSTITUTION: A chrome layer of a predetermined thickness and a gold layer of a predetermined thickness are deposited on a semiconductor layer having a predetermined thickness. A photoresist layer is formed on the gold layer. The photoresist layer formed in a region except the center of the gold layer is etched. A gold layer of a predetermined thickness is formed in the region in which the photoresist layer is eliminated. An ion implantation layer is formed in a region in which the photoresist layer formed on the center of the gold layer is eliminated. The semiconductor substrate is lapped to a predetermined thickness to form a chrome layer and a gold layer.
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