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REDUCTION OF CHARGE LOSS IN NONVOLATILE MEMORY CELLS BY PHOSPHORUS IMPLANTATION INTO PECVD NITRIDE/OXYNITRIDE FILMS
REDUCTION OF CHARGE LOSS IN NONVOLATILE MEMORY CELLS BY PHOSPHORUS IMPLANTATION INTO PECVD NITRIDE/OXYNITRIDE FILMS
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机译:通过将磷植入PECVD氮化物/氧化氮膜中减少非易失性记忆细胞中的电荷损失
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摘要
A semiconductor device formed in a semiconductor substrate with a low hydrogen content barrier layer formed over the semiconductor device. The barrier layer is implanted with phosphorus ions. The semiconductor device may have a hydrogen getter layer formed under the barrier layer. The barrier layer is a high temperature PECVD nitride film, a high temperature PECVD oxynitride film or a high temperature LPCVD nitride film. The hydrogen getter layer is P-doped film having a thickness between 1000 and 2000 Angstroms and is a PSG, BPSG, PTEOS deposited oxide film, or BPTEOS deposited oxide film. Interconnects are made by a tungsten damascene process.
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