PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND ABO3, TYPE METAL OXIDES AND MAKING ELECTRIONIC DEVICES INCLUDING SAME WITHOUT EXPOSURE TO OXYGEN

摘要

A liquid precursor containing a metal is applied to a first electrode, dried in air at a first temperature of 160° C. and then a second temperature of 260° C., RTP baked at a temperature of 300° C. in oxygen, RTP baked at a temperature of 650° C. in nitrogen, and annealed at a temperature of 800° C. in nitrogen to form a strontium bismuth tantalate layered superlattice material. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800. degree. C. in nitrogen. Alternatively, the second anneal may be performed in oxygen at a temperature of 600° C. or less. In this manner, a high electronic quality thin film of a layered superlattice material is fabricated without a high-temperature oxygen anneal.