One time programmable memory device, integrated circuit including the same and method for fabricating thereof

摘要

It discloses with respect to one-time programmable semiconductor integrated circuit and a method of manufacturing the same, including (one time programmable) memory elements, and this. The invention separate no additional photolithography process is used in the group process polysilicon that for forming the floating gate and a control gate of the one-time programmable memory device - producing a metal structure capacitor dielectric-polysilicon structure or a metal-dielectric layer used as a step to implement a one-time programmable memory device. The present invention also provides a way to increase the reliability of the gate oxide film of the one-time programmable memory element and a MOS (MOS) MOS transistor manufacturing a semiconductor integrated circuit including the transistor.