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Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same
Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same
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机译:可编程存储器件,包括该可编程存储器件的集成电路及其制造方法
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摘要
An integrated circuit comprises a memory device including an isolation layer for defining an active area of a substrate, a tunnel oxide layer formed on the active area, a floating gate formed over the active area and the isolation layer, an inter-gate dielectric layer formed on the floating gate, and a control gate formed on the inter-gate dielectric layer. The integrated circuit also includes a high and low voltage transistors.
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