Split gate type non-volatile semiconductor memory device having double-floating gate structure and process for manufacturing the same

摘要

And it discloses a non-volatile semiconductor memory device and a method of manufacturing consisting of a split gate type memory cell having a double-floating gate structure. Device according to the invention comprises a memory cell array having a memory cell that is uniquely determined by the contact of the one bit line and a word line formed on a substrate, respectively. The side walls of the active region is formed on the substrate has a first and second floating gates are formed respectively through the first and second coupling gate insulating film. First and second floating gates are electrically insulated from each other. An insulating film is formed between the word line and the active region. By having the two floating gates in a single memory cell adjacent in the word line by at least six it increases the number of corners that the electric field is concentrated. Using the side walls of the active region formed on a SOI substrate with a channel, the surface direction of the channel is formed perpendicularly to the substrate principal surface.