THE METHOD OF VERTICAL STACKING OF SELF ASSEMBLED QUANTUM DOTS USING TEMPERATURE ALTERNATING IN SPACER LAYER GROWTH STEP

摘要

The present invention relates to a technique vertically stacked quantum dots layers as a semiconductor quantum dot structure is formed. In order to laminate a single-layer quantum dots grown by spontaneous formation method using the difference (lattice mismatch) in the lattice constant (self assembled growth mode) vertically from a number of method for forming the quantum dots is the surface of the cover layer formed on the quantum dot layer of uniformity it is very important. By rising the quantum dot surface shape of each layer to be laminated to a high temperature during the temperature of growing the capping layer after growing the quantum dot as a way to maintain a constant to each floor, that is, after growing the capping layer at a constant thickness of cover nophyeoseo the layer growth temperature when growing the remainder of the cover layer and improve the surface uniformity of the covering layer, it is possible to improve the uniformity of the quantum dot layer also formed on the cover layer.