首页> 外国专利> PROCESS CHAMBER OF A RAPID THERMAL PROCESSING APPARATUS CAPABLE OF UNIFORMLY HEAT TRANSFERRING TO A WAFER LOADED THEREIN

PROCESS CHAMBER OF A RAPID THERMAL PROCESSING APPARATUS CAPABLE OF UNIFORMLY HEAT TRANSFERRING TO A WAFER LOADED THEREIN

机译:能够将热量均匀地传递到其中装载的晶片的快速热加工设备的处理室

摘要

PURPOSE: A process chamber of a rapid thermal process system for transmitting heat uniformly to a loaded wafer is provided to heat uniformly the loaded wafer by injecting N2 gas onto an upper surface of the loaded wafer. CONSTITUTION: A wafer is loaded into a main body(10). A lamp array(20) is used for heating a loaded wafer. An adaptor plate(30) is used for coupling the lamp array to the main body. N2 gas is injected onto an upper surface of the loaded wafer within the main body. A plurality of exhaust holes are formed at both sides of an upper part of the main body in order to exhaust the N2 gas. An N2 gas supply tube(100) is installed at a center of the lamp array. An injection nozzle is adhered to a lower part of the N2 gas supply tube.
机译:目的:提供一种快速热处理系统的处理室,该处理室用于将热量均匀地传递到装载的晶片上,以通过将N2气体注入装载的晶片的上表面来均匀地加热装载的晶片。组成:将晶片装入主体(10)。灯阵列(20)用于加热装载的晶片。转接板(30)用于将灯阵列耦合到主体。将N 2气体注入到主体内的装载晶片的上表面上。为了排出N 2气体,在主体的上部的两侧形成有多个排气孔。在灯阵列的中心安装有氮气供应管(100)。喷嘴附着在氮气供给管的下部。

著录项

  • 公开/公告号KR100523643B1

    专利类型

  • 公开/公告日2005-10-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030006809

  • 发明设计人 박재일;김태훈;

    申请日2003-02-04

  • 分类号H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:15

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