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PROCESS CHAMBER OF A RAPID THERMAL PROCESSING APPARATUS CAPABLE OF UNIFORMLY HEAT TRANSFERRING TO A WAFER LOADED THEREIN
PROCESS CHAMBER OF A RAPID THERMAL PROCESSING APPARATUS CAPABLE OF UNIFORMLY HEAT TRANSFERRING TO A WAFER LOADED THEREIN
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机译:能够将热量均匀地传递到其中装载的晶片的快速热加工设备的处理室
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摘要
PURPOSE: A process chamber of a rapid thermal process system for transmitting heat uniformly to a loaded wafer is provided to heat uniformly the loaded wafer by injecting N2 gas onto an upper surface of the loaded wafer. CONSTITUTION: A wafer is loaded into a main body(10). A lamp array(20) is used for heating a loaded wafer. An adaptor plate(30) is used for coupling the lamp array to the main body. N2 gas is injected onto an upper surface of the loaded wafer within the main body. A plurality of exhaust holes are formed at both sides of an upper part of the main body in order to exhaust the N2 gas. An N2 gas supply tube(100) is installed at a center of the lamp array. An injection nozzle is adhered to a lower part of the N2 gas supply tube.
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