and unexposed photoresist films, respectively, in the course of their silylation by means of automatic ellipsometer and use of their measurement results to calculate selectivity from formula This method provides for determining selectivity of polymeric-film near-surface silylation directly in the course of gas-phase chemical modification and for doing so at any moment, that is to test source material for silylation ability. ; EFFECT: enhanced precision of silylation selectivity determination at any time moment. ; 1 cl, 1 dwg"/> METHOD FOR DETERMINING SILYLATION SELECTIVITY IN PHOTOLITHOGRAPHIC PROCESSES USING CHEMICAL GAS-PHASE MODIFICATION OF PHOTORESIST FILM NEAR-SURFACE LAYER
首页> 外国专利> METHOD FOR DETERMINING SILYLATION SELECTIVITY IN PHOTOLITHOGRAPHIC PROCESSES USING CHEMICAL GAS-PHASE MODIFICATION OF PHOTORESIST FILM NEAR-SURFACE LAYER

METHOD FOR DETERMINING SILYLATION SELECTIVITY IN PHOTOLITHOGRAPHIC PROCESSES USING CHEMICAL GAS-PHASE MODIFICATION OF PHOTORESIST FILM NEAR-SURFACE LAYER

机译:光阻膜近表面层的化学气相修饰法测定光照相工艺中甲硅烷基选择性的方法

摘要

FIELD: microelectronics. ; SUBSTANCE: proposed method meant for use in submicron lithography and in particular in production of elements of submicron-size structures on semiconductor and other substrates to test material during early stage of its manufacture for its silylation ability includes measurement of variation rates of refractive indices of exposed and unexposed photoresist films, respectively, in the course of their silylation by means of automatic ellipsometer and use of their measurement results to calculate selectivity from formula This method provides for determining selectivity of polymeric-film near-surface silylation directly in the course of gas-phase chemical modification and for doing so at any moment, that is to test source material for silylation ability. ; EFFECT: enhanced precision of silylation selectivity determination at any time moment. ; 1 cl, 1 dwg
机译: FIELD:微电子学。 ; SUBSTANCE:拟用于亚微米光刻的方法,尤其是用于在半导体和其他基板上生产亚微米尺寸结构的元件,以在其制造的早期阶段对其材料的甲硅烷基化能力进行测试的方法,包括测量折射率的变化率暴露索引 和未曝光 光刻胶膜在通过自动椭偏仪进行甲硅烷基化的过程中,分别使用其测量结果根据公式计算选择性 该方法可以直接在气相化学改性过程中确定聚合物膜近表面甲硅烷基化的选择性,并可以随时进行,以测试原料的甲硅烷基化能力。 ; 效果:随时提高硅烷化选择性的精确度。 ; 1 cl,1 dwg

著录项

  • 公开/公告号RU2244363C1

    专利类型

  • 公开/公告日2005-01-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号RU20030125066

  • 发明设计人 CHURIKOV A.A.;

    申请日2003-08-12

  • 分类号H01L21/66;

  • 国家 RU

  • 入库时间 2022-08-21 22:02:11

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