and unexposed photoresist films, respectively, in the course of their silylation by means of automatic ellipsometer and use of their measurement results to calculate selectivity from formula This method provides for determining selectivity of polymeric-film near-surface silylation directly in the course of gas-phase chemical modification and for doing so at any moment, that is to test source material for silylation ability. ; EFFECT: enhanced precision of silylation selectivity determination at any time moment. ; 1 cl, 1 dwg"/>
METHOD FOR DETERMINING SILYLATION SELECTIVITY IN PHOTOLITHOGRAPHIC PROCESSES USING CHEMICAL GAS-PHASE MODIFICATION OF PHOTORESIST FILM NEAR-SURFACE LAYER
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METHOD FOR DETERMINING SILYLATION SELECTIVITY IN PHOTOLITHOGRAPHIC PROCESSES USING CHEMICAL GAS-PHASE MODIFICATION OF PHOTORESIST FILM NEAR-SURFACE LAYER
METHOD FOR DETERMINING SILYLATION SELECTIVITY IN PHOTOLITHOGRAPHIC PROCESSES USING CHEMICAL GAS-PHASE MODIFICATION OF PHOTORESIST FILM NEAR-SURFACE LAYER
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机译:光阻膜近表面层的化学气相修饰法测定光照相工艺中甲硅烷基选择性的方法
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FIELD: microelectronics. ; SUBSTANCE: proposed method meant for use in submicron lithography and in particular in production of elements of submicron-size structures on semiconductor and other substrates to test material during early stage of its manufacture for its silylation ability includes measurement of variation rates of refractive indices of exposed and unexposed photoresist films, respectively, in the course of their silylation by means of automatic ellipsometer and use of their measurement results to calculate selectivity from formula This method provides for determining selectivity of polymeric-film near-surface silylation directly in the course of gas-phase chemical modification and for doing so at any moment, that is to test source material for silylation ability. ; EFFECT: enhanced precision of silylation selectivity determination at any time moment. ; 1 cl, 1 dwg展开▼