A method for testing of defects in structures formed on the photomasks

摘要

A method for testing the mask structure of a for the projection of a structure on a wafer photomask is used, the method comprising the steps of:Preparation of structural data of a structure formed on a photomask; calculation of the light intensity distribution of the on to the wafer on the basis of the structural data projected structure;Transmission of an irradiating light through the photomask, in order to project the structure and detection of the light intensity distribution of the projected structure;Comparison of the calculated light intensity distribution with the detected light intensity distribution; andTesting of the structure formed on the photomask with respect to a defect on the basis of the result of the comparison.