Measuring device for characterization of mechanical stress states in planar materials

摘要

Measuring device for characterization of mechanical stress states in planar materials in a temperature range from 200 to 400 k, consisting of a capacitive measuring arrangement of a substrate plate, on which the sample to be examined is suitably fastened, and a base plate in a sample chamber, as well as associated media supply -, - measuring and evaluation devices, wherein the substrate plate is mounted freely and the base plate electrodes, wherein the substrate plate (1) consists of a silicon substrate provided on both sides with a gold coating, in which the surface properties and a gold coating on both sides of the silicon substrate are almost identical, so that the substrate plate (1) has no temperature-dependent natural curvature, that the substrate plate (1) on a three-point support (3) is made of an extremely expansion low material rests, that the electrodes as annular electrodes (4a, 4b) are formed, and in each case of the same surface area, and that the distance between the ring electrodes (4a, 4b) on the base plate at least ten times the distance between the ring electrodes (4a, 4b) and of the substrate plate (1), and in that between..