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International Workshop on Stress Management for 3D ICs Using Through Silicon Vias

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1.Characterization Of Deformation Properties Of Metals In 3D ICs

机译：三维IC中金属变形特性的表征
- 作者：Olaf Wittler;Raul Mro?ko;Saskia Huber;Lukasz Dowhan;Klaus‐Dieter Lang
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- Thermo-mechanical simulation;
- Nanoindentation;
- Elastic-plastic behavior;
2.Raman Spectroscopy Analysis Of Mechanical Stress Near Cu‐TSVs

机译：Cu-TSVS附近机械应力的拉曼光谱分析
- 作者：Ingrid De Wolf
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- Raman spectroscopy;
- TSV;
- stress;
3.3D TCAD Modeling For Stress Management In Through Silicon Via (TSV) Stacks

机译：3D通过硅通孔（TSV）堆栈压力管理模型的TCAD模型
- 作者：Xiaopeng Xu;Aditya Karmarkar
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- TSV;
- TCAD;
- modeling;
- mechanical stress;
- parasitic parameters;
- mobility;
- reliability;
4.Stress‐Induced Delamination Of Through Silicon Via Structures

机译：通过结构应力诱导通过硅的分层
- 作者：Suk‐Kyu Ryu;Kuan‐Hsun Lu;Jay Im;Rui Huang;Paul S. Ho
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- 3D interconnect;
- TSV;
- Thermo-mechanical reliability;
- FEA;
- Crack driving force;
5.Multi‐Scale Environment For Simulation And Materials Characterization In Stress Management For 3D IC TSV‐Based Technologies-Effect Of Stress On The Device Characteristics

机译：基于3D IC TSV技术的压力管理仿真和材料的多尺度环境 - 压力对器件特性的影响
- 作者：Valeriy Sukharev;Ehrenfried Zschech
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- Simulation;
- FEA;
- compact model;
- materials characterization;
6.Determination Of Thermal And Mechanical Properties Of Packaging Materials For The Use In FEM‐Simulations

机译：用于FEM模拟的包装材料的热和力学性能的测定
- 作者：Mike Roellig;Bjoern Boehme;Karsten Meier;René Metasch
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- ploymer;
- visco elasticity;
- bulk modulus;
- cure kinetics;
- elongation modulus;
- solder properties;
- constitutive creep laws;
7.Multi‐Scale Mechanical Probing Techniques To Investigate The Stability Of BEOL Layer Stacks With Sub‐100 nm Structures

机译：多尺度机械探测技术，以研究BEOL层堆与亚100nm结构的稳定性
- 作者：Holm Geisler;Matthias U. Lehr;Alexander Platz;Ulrich Mayer;Petra Hofmann;Hans‐Jürgen Engelmann
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- Chip-package interaction;
- stress;
- nanoindentation;
- ultralor-k;
- Backend-of-line;
- BABSI test;
8.TechTuning: Stress Management For 3D Through‐Silicon‐Via Stacking Technologies

机译：TechTuning：通过堆叠技术3D通过硅胶的压力管理
- 作者：Riko Radojcic;Matt Nowak;Mark Nakamoto
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- design for manufacturing;
- modeling;
- simulation;
- materials parameters;
9.X‐Ray Strain Measurements In Strained Silicon Devices

机译：应变硅装置中的X射线应变测量
- 作者：Alex Dommann;Antonia Neels
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- reliability;
- semiconductor devices;
- SiP;
- strain analysis;
- testing;
- x-ray diffraction;
10.Nanoindentation Study Of Elastic Anisotropy Of Cu Single Crystals And Grains In TSVs

机译：TSV中Cu单晶和谷物弹性各向异性的纳米intentation研究
- 作者：Kong Boon Yeap;Ude D. Hangen;Dierk Raabe;Ehrenfried Zschech
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- nanoindentation;
- copper microstructure;
- clastic modulus;
11.NanoXCT-A High‐Resolution Technique For TSV Characterization

机译：Nanoxct-TSV表征的高分辨率技术
- 作者：Sven Niese;Peter Krueger;Ehrenfried Zschech
- 会议名称：《International Workshop on Stress Management for 3D ICs Using Through Silicon Vias》 | 2011年
- X-ray microscopy;
- X-ray tomography;
- process control;
- quality control;
- TSV;