Semiconductor structure with improved smaller by intake voltage losses and a higher blocking capability

摘要

Semiconductor device havinga) a semiconductor substrate;b) a first zone of a first conductivity type in the semiconductor substrate;c) a second zone of a second conductivity type in the semiconductor substrate;d) a plurality of charge control electrodes, wherein each charge control electrode in the plurality of the charge control electrodes is formed, in contrast to the other charge control electrodes in the plurality of the charging electrodes to be prestressed; ande) a dielectric material, the around each of the stacked charge control electrodes is arranged around.