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Manufacturing semiconducting memory device involves providing protective structure in doped region to inhibit existence of leakage current path between gate conductor and doped region
Manufacturing semiconducting memory device involves providing protective structure in doped region to inhibit existence of leakage current path between gate conductor and doped region
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机译:制造半导体存储器件涉及在掺杂区域中提供保护结构,以抑制栅导体和掺杂区域之间存在泄漏电流路径。
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摘要
The method involves providing auxiliary transistor structures (1) required for a lithography step in the semiconducting substrate to compensate for topology differences, providing a region (2) doped with a first conductor type for the auxiliary transistor structures on a section (5) of the substrate surface, providing a gate oxide (3) on a sub-region of the section, providing a conducting coating on the gate oxide as the gate conductor (4) and providing a protective structure (6) in the doped region to inhibit the existence of a leakage current path between the gate conductor and the doped region. An independent claim is also included for the following: (1) an auxiliary transistor structure in a semiconducting substrate.
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