首页> 外国专利> Microsystem on semiconductor substrate, e.g. acceleration sensor, with integrated circuit, micromechanical component has silicon functional layer on substrate near component region, metallization to contact point, preferred interrupt points

Microsystem on semiconductor substrate, e.g. acceleration sensor, with integrated circuit, micromechanical component has silicon functional layer on substrate near component region, metallization to contact point, preferred interrupt points

机译:半导体基板上的微系统加速度传感器,带集成电路,微机械零件在基板上靠近零件区域的地方具有硅功能层,金属化至接触点,优选中断点

摘要

The microsystem has an integrated circuit and at least one micromechanical component with a silicon functional layer (7) electrically connected to it. Structured metallization on the functional layer is connected via contact holes to a buried wiring plane of the component. A silicon layer formed on the substrate forms the functional layer near the component region. A single or multilayer metallization leads at least to a contact point to the relevant connecting element and electrically isolating preferred interrupt points (15) are formed in each connecting element. An independent claim is also included for a method of manufacturing a microsystem.
机译:该微系统具有集成电路和至少一个微机械部件,该微机械部件具有与其电连接的硅功能层(7)。功能层上的结构化金属化层通过接触孔连接到组件的掩埋布线平面。形成在基板上的硅层在部件区域附近形成功能层。单个或多层金属镀层至少通向相关连接元件的接触点,并且在每个连接元件中形成电隔离的优选中断点(15)。还包括用于制造微系统的方法的独立权利要求。

著录项

  • 公开/公告号DE10348908A1

    专利类型

  • 公开/公告日2005-05-25

    原文格式PDF

  • 申请/专利权人 ROBERT BOSCH GMBH;

    申请/专利号DE2003148908

  • 发明设计人 LAERMER FRANZ;

    申请日2003-10-21

  • 分类号B81B7/02;B81B3/00;B81C3/00;G01P15/08;

  • 国家 DE

  • 入库时间 2022-08-21 22:01:07

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