首页> 外国专利> Arrangement for determining the density of back-scattered electrons diffracted from crystal lattices has first and second measurement means with the second measurement means having an order of magnitude higher resolution

Arrangement for determining the density of back-scattered electrons diffracted from crystal lattices has first and second measurement means with the second measurement means having an order of magnitude higher resolution

机译:用于确定从晶格衍射的反向散射电子的密度的装置具有第一和第二测量装置,第二测量装置具有更高的分辨率一个数量级。

摘要

Arrangement for determining the density of back- scattered electrons within the areas of diffraction bands, which have been generated as a result of the irradiation of a crystal lattice with electrons. The arrangement has first and second measurement means and evaluation means. The first measurement means are used to determine the electron density according to a solid angle determination, while the second determines it in the Kikuchi lines. The spatial resolution of the first measurement means is an order of magnitude less than that of the second measurement means.
机译:用于确定衍射带区域内的后向散射电子密度的装置,该衍射带是由于用电子辐照晶格而产生的。该装置具有第一和第二测量装置以及评估装置。第一测量装置用于根据立体角确定来确定电子密度,而第二测量装置在菊池线中确定它。第一测量装置的空间分辨率比第二测量装置的空间分辨率小一个数量级。

著录项

  • 公开/公告号DE102004006429A1

    专利类型

  • 公开/公告日2005-09-08

    原文格式PDF

  • 申请/专利权人 OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG;

    申请/专利号DE20041006429

  • 发明设计人 WENDT ULRICH;

    申请日2004-02-09

  • 分类号G01N23/203;

  • 国家 DE

  • 入库时间 2022-08-21 22:00:53

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