Wet etching semiconductors comprises contacting the semiconductor with an electrolyte liquid and then irradiating the contact surface formed with UV light

摘要

A process for the photoelectrochemical wet etching of a semiconductor (12) made e.g. of gallium nitride comprises contacting the semiconductor with an electrolyte liquid (6), then irradiating the contact surface (12) formed with UV light (18). A photo current generated at the surface is measured. During etching, fresh electrolyte is supplied to the semiconductor.