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Organic field effect transistor has narrow strip type conductor drain and source electrodes, a gate dielectric and a gate electrode that overlaps the narrow strips of the drain and source electrodes
Organic field effect transistor has narrow strip type conductor drain and source electrodes, a gate dielectric and a gate electrode that overlaps the narrow strips of the drain and source electrodes
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机译:有机场效应晶体管具有窄条型导体漏电极和源电极,栅极电介质和与漏电极和源电极的窄条重叠的栅电极
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摘要
Organic field effect transistor (1) has drain (2) and source (3) electrodes as well as a gate dielectric (5) that is isolated from the drain and source and a partially overlapping gate electrode (6). The drain and source electrodes are configured as narrow strip conductors extending in a first lateral direction (x). The gate electrode is arranged in a perpendicular direction (y) and extends over the gate and source electrodes for defined distances (B2, B3). The widths correspond to the overlap lengths of the FET.
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