Memory cell e.g. FET, programming method for computer system, involves applying additional programming pulse to selected cells that are programmed for highest state, without verifying state of cells, for enlarging read margin

摘要

The method involves applying programming pulse and verification voltage to memory cells to verify that each cell has reached a desired state. Read voltage that equals the verification voltage is applied to read data from the cells. The cells that are programmed for highest state are selected. Additional programming pulse is applied to the selected cells without verifying the state of selected cells for enlarging a read margin. Independent claims are also included for the following: (A) a method of operating a memory device comprising programming a set of memory cells to a desired state (B) a nonvolatile memory device comprising a control circuitry coupled to memory cells.