首页> 外国专利> BEARING WITH A SURFACE MADE BY REPLACING METAL CARBIDE TO CARBON ON THE SURFACE OF METAL CARBIDE THROUGH CORROSIONS WITH HALOGENS

BEARING WITH A SURFACE MADE BY REPLACING METAL CARBIDE TO CARBON ON THE SURFACE OF METAL CARBIDE THROUGH CORROSIONS WITH HALOGENS

机译:通过卤素腐蚀使金属碳化物表面上的金属碳化物置换为碳而制成的表面

摘要

A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to (he formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0% (trace) amounts to 100% halogen-containing gaseous etchant, e.g., Cl2, and about 0% to 99.9% H2 (hydrogen gas) at temperatures from about 100° C. to about 4,000° C., preferably about 800° C. to about 1,200° C., over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres.
机译:一种通过在含卤素的气态蚀刻剂和任选的氢气中进行蚀刻,在金属碳化物(优选为SiC)表面上合成碳涂层的方法,从而导致在金属碳化物上形成碳层。在大约100°C至大约4,000°C的温度下,在含约0%(痕量)的气体混合物中执行的操作相当于100%含卤素的气态蚀刻剂(例如Cl2)和约0%至99.9%的H2(氢气)在任何时间范围内,优选保持在约800℃至约1200℃,优选保持在约一个大气压至约100个大气压的压力。

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