A process for the epitaxial deposition of a silicon layer on a heavily doped silicon substrate

摘要

The invention relates to a method of deposition by epitaxy in the gaseous phase of a silicon layer (4) on a monocrystalline silicon substrate (1) comprising zones with a high concentration of arsenic and phosphorus (2), making it possible to limit the arsenic autodoping or phosphorus of the epitaxied layer of silicon (4). According to the invention, it provides a step (t5 - t6) of the preliminary deposit of a low dose of germanium (6) to the surface of the silicon substrate (1), and a step (t6 - t2) of desorption of arsenic atoms or phosphorus present at the surface of the substrate. The process according to the invention can be used in the context of the production of integrated circuits bicmos technology.