Improved stabilization of the annealing heat treatment applied to slices of semiconductor materials used in micro-electronic, optical and opto-electronic applications

摘要

Heat treatment of a slice, made from one or several semiconductor materials mounted on a support, consists of slowly raising the temperature to a final treatment temperature. The temperature increase is effected with at least one step in order to diminish the temperature gradients on the slice and between the slice and its support, to minimize the appearance of lines in the slice. The final treatment temperature is 1100 [deg] C and the evolution of temperature may include to steps at 1050 [deg] C and 1075 [deg] C, each step having a duration of about 10 minutes.