Improved computer permanent memory/manufacture method having structure with first channel/magneto resistive element and second channel upper layer/isolating layer and having electroless deposition soft magnetic material

摘要

The magnetic memory structure has a first channel (91) with a magnetoresitive element (10) and tunnel effect isolating layers. A second channel (117) forms an upper layer and an isolating lower layer (71) with a soft magnetic material (83) formed by electroless deposition.