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Production of field effect transistors with reduced short channel effects and offering an elevated degree of integration for Silicon On Insulator integrated circuits
Production of field effect transistors with reduced short channel effects and offering an elevated degree of integration for Silicon On Insulator integrated circuits
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机译:生产具有减小的短沟道效应并为绝缘体上硅集成电路提供更高集成度的场效应晶体管
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摘要
The production of a field effect transistor comprises: (A) obtaining a conductor substrate (100) supporting a portion of semiconductor material above a surface (S), with a portion of temporary material between it and the substrate; (B) forming a gate (2) comprising an upper part (C) in rigid liaison with the semiconductor material and a support part (A) resting on the substrate, the gate being obtained such that it is electrically insulated with respect to the semiconductor material and the conductor substrate; (C) removing the temporary material, the gate assuring the retention of the semiconductor material portion with respect to the substrate, in a manner to create an empty space between the semiconductor material portion and the substrate in place of the temporary material; (D) filling, at least partially, the empty space with an insulating material. Independent claims are also included for: (A) a field effect transistor produced by the method; (B) an integrated circuit incorporating this field effect transistor.
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