MATCHING TYPE OPTICAL MEASUREMENT FOR DYNAMICALLY CONTROLLING CRITICAL DIMENSION (CD), AND LITHOGRAPHIC PROCESS SYSTEM

摘要

PPROBLEM TO BE SOLVED: To enhance the productivity of wafers by improving CD during photoresist process and uniformity of CD. PSOLUTION: The following steps are included. A first resist layer is formed on a first process wafer. In a heating process, a first resist pattern is formed on the first resist layer, based on a first temperature curve. After this, light beams scattered from the first resist pattern are generated and collected. Then, 3D data of the CD of the first resist pattern is obtained by processing the scattered light beams. Subsequently, the CD of a second resist pattern is obtained, by determining a second temperature curve necessary for the heating process. In the CD of the second resist pattern, the second resist pattern on a second process wafer is included. Finally, in the heating process, the second resist pattern is formed based on the second temperature curve. PCOPYRIGHT: (C)2007,JPO&INPIT