Bi12TiO20 SINTERED COMPACT AND PHOTOCONDUCTIVE LAYER

摘要

PPROBLEM TO BE SOLVED: To provide a BiSB12/SBTiOSB20/SBsintered compact capable of realizing high sensitivity as a photoconductive layer constituting a radiation image pickup panel for recording radiation image information as electrostatic latent images. PSOLUTION: In the BiSB12/SBTiOSB20/SBsintered compact, BiSB12/SBTiOSB20/SBpowder is sintered at ≥700°C and 800°C or the different phase of a BiSB12/SBTiOSB20/SBsintered compact surface is removed so that the strength ratio of the strongest peak of an X-ray diffraction pattern by the different phase other than a BiSB12/SBTiOSB20/SBphase to the strongest peak of the X-ray diffraction pattern by the BiSB12/SBTiOSB20/SBphase becomes ≤1/100. PCOPYRIGHT: (C)2006,JPO&NCIPI