首页> 外国专利> MATERIAL FOR PARTS IN VACUUM APPARATUS, PARTS IN VACUUM APPARATUS, VACUUM APPARATUS, METHOD FOR MANUFACTURING MATERIAL FOR PARTS IN VACUUM APPARATUS, METHOD FOR TREATING PARTS IN VACUUM APPARATUS, AND TREATMENT METHOD IN VACUUM APPARATUS

MATERIAL FOR PARTS IN VACUUM APPARATUS, PARTS IN VACUUM APPARATUS, VACUUM APPARATUS, METHOD FOR MANUFACTURING MATERIAL FOR PARTS IN VACUUM APPARATUS, METHOD FOR TREATING PARTS IN VACUUM APPARATUS, AND TREATMENT METHOD IN VACUUM APPARATUS

机译:真空设备中的零件材料,真空设备中的零件,真空设备,制造真空设备中零件的材料的方法,真空设备中零件的处理方法以及真空设备中的处理方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a material for parts in a vacuum apparatus, which reduces the gas-releasing rate from the parts to a value lower than 10-12 Pa (H2) m/s.;SOLUTION: The method for manufacturing the material for the parts in the vacuum apparatus comprises the steps of: reducing a pressure around an alloy consisting of Cu and an additive element; heating the alloy to discharge hydrogen from the alloy, at the same time, collecting the additive element into the vicinity of the surface of the alloy and precipitating it therein; and forming any one of an oxide film, a nitride film and an oxidation nitride film of the additive element on the surface of the alloy, by keeping the alloy in a temperature range between the temperature of the alloy having been heated in order to discharge hydrogen and room temperature, exposing the alloy to elemental oxygen, elemental nitrogen, a mixed gas of oxygen and nitrogen, ozone (O3), an oxygen-containing compound, a nitrogen-containing compound, a compound containing oxygen and nitrogen, or a substance of combining them or plasma thereof, to react them with the precipitated additive element.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种在真空设备中制造零件材料的方法,该方法将零件的气体释放速率降低到低于10 -12 Pa(H 2 )m / s .;解决方案:真空设备中用于零件材料制造的方法包括以下步骤:降低由Cu和添加元素组成的合金周围的压力;同时加热合金以释放合金中的氢,将添加元素收集到合金表面附近并在其中沉淀。通过将合金保持在已加热的合金的温度之间的温度范围内以在氢气的形成过程中,在合金的表面上形成添加元素的氧化膜,氮化膜和氧化氮化膜中的任一种。在室温下,使合金暴露于元素氧,元素氮,氧和氮的混合气体,臭氧(O 3 ),含氧化合物,含氮化合物,氧和氮,或它们的结合物质或它们的等离子体,使它们与沉淀的添加元素发生反应。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006009038A

    专利类型

  • 公开/公告日2006-01-12

    原文格式PDF

  • 申请/专利权人 SHINKU JIKKENSHITSU:KK;

    申请/专利号JP20040165775

  • 发明设计人 WATANABE FUMIO;

    申请日2004-06-03

  • 分类号C23C8/12;C22C9;C23C8/20;C23C8/24;C23C8/28;C23C8/36;

  • 国家 JP

  • 入库时间 2022-08-21 21:56:34

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