Material for vacuum device, vacuum device, vacuum apparatus, manufacturing method of material for vacuum device, processing method of vacuum device, and processing method of vacuum apparatus

摘要

The present invention relates to a manufacturing method of a material for vacuum device used in a vacuum apparatus that generates ultra-high vacuum and performs processing. Its constitution has the steps of: reducing pressure around the alloy of Cu and a doping element; increasing the temperature of the alloy to outgas hydrogen from the alloy, and gathering the doping element near the surface of the alloy and precipitating the doping element; and exposing the alloy to single oxygen, single nitrogen, mixed gas of oxygen and nitrogen, ozone (O₃), oxygen content compound, nitrogen content compound or oxygen-nitrogen content compound, or a combination of them, or a plasma thereof while the temperature of the alloy is maintained at a range of room temperature or higher and the temperature of the alloy increased for outgassing hydrogen or lower, whereby it is reacted with the precipitated doping element so that one of an oxide film, a nitride film and an oxide-nitride film of the doping element is formed on a surface layer of the alloy.