TOP CONTACT TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME TOP CONTACT TYPE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of forming two or more metals in a narrow pitch on an organic material layer, etc.;SOLUTION: The method of forming at least two metals 6 on at least one organic material layer 5, with the shortest distance between the metals larger than zero and not more than 100 μm, is provided. This method employs a substrate having a bridge structure 4 which consists of an upright portion extended upwards from the surface of the substrate and a crossing portion which is extended from the upright portion and crosses the substrate so as to divide a space above the substrate into two, and includes a process wherein an organic material 5 is so evaporated on the substrate as to continuously coat the surface of the substrate divided into two and the surface of the substrate below the crossing portion, and a process wherein a metal 6 is evaporated on the organic material 5 from a predetermined direction above the crossing portion after evaporating the organic material 5.;COPYRIGHT: (C)2006,JPO&NCIPI