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RFID SYSTEM INCLUDING MEMORY FOR CORRECTING FAIL CELL AND METHOD FOR CORRECTING FAIL CELL USING THE SAME

机译:包括用于纠正故障细胞的存储器的rfid系统以及使用该方法来纠正故障细胞的方法

摘要

PPROBLEM TO BE SOLVED: To improve yield of an RFID system by comparing data of a unit cell for each group and correcting effectively cell data distributed randomly in memories in RFID in a state in which the same data are written in many unit cells belonging to one group. PSOLUTION: Such technology is disclosed that a failed cell correcting circuit is included in a memory in the RFID system, and yield of the RFID system is improved by correcting effectively cell data distributed randomly concerning the RFID system including a memory which can correct a failed cell and its failed cell correcting method. Therefore, a predetermined number of unit cells are separated into one memory group, and the same data are stored in each memory group at a write mode, At a read mode, the cell data of the selected memory group are compared, the same data are identified as effective data to improve yield of the RFID system. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:

要解决的问题:通过比较每个组的单位单元数据并在将相同数据写入许多单位单元的状态下有效地校正随机分布在RFID存储器中的单元数据,从而提高RFID系统的产量属于一组。

解决方案:公开了这样的技术:在RFID系统的存储器中包括有故障的单元校正电路,并且通过有效地校正与包括可以校正的存储器的RFID系统有关的随机分布的单元数据来提高RFID系统的产量。故障单元及其故障纠正方法。因此,将预定数量的单位单元分成一个存储组,并且在写入模式下将相同的数据存储在每个存储组中。在读取模式下,比较所选存储组的单元数据,将相同的数据被识别为有效数据,以提高RFID系统的产量。

版权:(C)2007,日本特许厅&INPIT

著录项

  • 公开/公告号JP2006302487A

    专利类型

  • 公开/公告日2006-11-02

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC;

    申请/专利号JP20050366356

  • 发明设计人 KANG HEE BOK;AHN JIN HONG;

    申请日2005-12-20

  • 分类号G11C29/02;G11C29/34;G11C11/22;G06K19/07;G01R31/28;

  • 国家 JP

  • 入库时间 2022-08-21 21:55:36

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