首页> 外国专利> SEMICONDUCTOR OPTICAL AMPLIFICATION DEVICE, SEMICONDUCTOR OPTICAL AMPLIFICATION DRIVING DEVICE, AND SEMICONDUCTOR OPTICAL RECEIVING DEVICE

SEMICONDUCTOR OPTICAL AMPLIFICATION DEVICE, SEMICONDUCTOR OPTICAL AMPLIFICATION DRIVING DEVICE, AND SEMICONDUCTOR OPTICAL RECEIVING DEVICE

机译:半导体光放大器装置,半导体光放大器驱动装置以及半导体光接收装置

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor optical amplification device, a semiconductor optical amplification driving device, and a semiconductor optical receiving device capable of reducing power consumption, receiving an optical signal suffering a transmission loss, and amplifying an optical signal and reducing the bit error rate thereof.;SOLUTION: The semiconductor optical amplification device 1 comprises an active layer 2, an n-type InP substrate 9, an n-type InP clad layer 12, a p-type InP clad layer 13, p electrodes 21-23, and n electrodes 27-29. The active layer 2 is composed of e.g. InGaAsP and includes a saturable absorption region 4 and optical amplification regions 5, 6. common modulation currents are injected into the optical amplification regions 5, 6 via the p electrodes 22, 23, respectively. A modulation current is injected into the saturable absorption region 4 via the p electrode 21 independently of the optical amplification regions 5, 6. The active layer 2 receives injected light Pin which is an external optical signal on which additional noise light is applied, and emits output light Pout which is amplified injected light Pin.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种半导体光放大装置,半导体光放大驱动装置以及半导体光接收装置,该半导体光放大装置,半导体光放大驱动装置以及半导体光接收装置能够降低功耗,接收遭受传输损失的光信号并放大光信号并减少比特。解决方案:半导体光放大装置1包括有源层2,n型InP衬底9,n型InP覆盖层12,p型InP覆盖层13,p电极21-23。 ;和n个电极27-29。有源层2由例如碳纳米管组成。 InGaAsP并包括可饱和吸收区域4和光放大区域5、6。公共调制电流分别经由p电极22、23注入到光放大区域5、6中。独立于光放大区域5、6,经由p电极21将调制电流注入到饱和吸收区域4中。有源层2接收注入的光Pin,该注入的光Pin是施加了附加噪声光的外部光信号,并且发射输出光Pout是放大的注入光Pin .;版权所有(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006073874A

    专利类型

  • 公开/公告日2006-03-16

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20040257062

  • 发明设计人 OKUMURA TOSHIYUKI;MATSUDA KYOKO;

    申请日2004-09-03

  • 分类号H01S5/50;

  • 国家 JP

  • 入库时间 2022-08-21 21:55:22

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