首页> 外国专利> SINGLE CRYSTAL MAGNESIUM OXIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME, AND PROTECTIVE FILM FOR PLASMA DISPLAY PANEL

SINGLE CRYSTAL MAGNESIUM OXIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME, AND PROTECTIVE FILM FOR PLASMA DISPLAY PANEL

机译:单晶氧化镁烧结体,制造方法以及等离子显示屏的保护膜

摘要

PPROBLEM TO BE SOLVED: To provide a single crystal MgO sintered compact used for a target material in order to deposit a MgO film on a substrate by using a vacuum vapor deposition method including the electron beam method in which the excellent film characteristic such as the discharge characteristic of the obtained MgO film when being used for a protective film for a PDP is improved without decreasing the density and degrading the sputtering resistance of the MgO film, and to provide a method for manufacturing the single crystal MgO sintered compact and the protective film for the PDP which is obtained from the single crystal MgO sintered compact as the target. PSOLUTION: In the single crystal magnesium oxide sintered compact, the content of Si and Ca to MgO is 0.01-3.0 mass% in terms of SiOSB2/SB, and CaO, respectively, and the inequalities 0.01 y/x 1.5, where x (pts.mass) denotes the content of Si, and y(pts.mass) denotes the content of Ca to Mg of 100 pts.mass. The protective film for a plasma display panel is manufactured by the electron beam vapor deposition method, the ion irradiation vapor deposition method, or the sputtering method by using the single crystal magnesium oxide sintered compact for a target. PCOPYRIGHT: (C)2006,JPO&NCIPI
机译:

要解决的问题:提供一种用于靶材的单晶MgO烧结体,以通过使用包括具有优异的膜特性的电子束方法在内的真空气相沉积法在衬底上沉积MgO膜。本发明提供一种在不降低密度且不降低MgO膜的耐溅射性的情况下改善所获得的MgO膜用于PDP保护膜时的放电特性的方法,并提供了一种用于制造单晶MgO烧结体的方法和制备该MgO膜的方法。以单晶MgO烧结体为靶得到的PDP保护膜。

解决方案:在单晶氧化镁烧结体中,Si和Ca对MgO的含量分别为SiO 2 和CaO,为0.01-3.0质量%,不等式为0.01 y / x 1.5,其中x(pts.mass)表示Si的含量,y(pts.mass)表示Ca至Mg的100 pts.mass的含量。通过使用电子束气相沉积法,离子照射气相沉积法或溅射法,通过将单晶氧化镁烧结体用作靶,来制造等离子显示面板用保护膜。

版权:(C)2006,JPO&NCIPI

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