首页> 外国专利> ELEMENT FOR LASER VOLTAGE PROBE MEASUREMENT, AND METHOD FOR MEASURING POTENTIAL WAVEFORM IN SEMICONDUCTOR INTEGRATED CIRCUIT USING IT

ELEMENT FOR LASER VOLTAGE PROBE MEASUREMENT, AND METHOD FOR MEASURING POTENTIAL WAVEFORM IN SEMICONDUCTOR INTEGRATED CIRCUIT USING IT

机译:激光电压探针测量的元件,以及使用它测量半导体集成电路中电位波形的方法

摘要

PROBLEM TO BE SOLVED: To provide a method and device for facilitating measurement of potential waveform by a laser voltage probe by enabling response to reduction in amplitude of signal voltage and contraction of element size.;SOLUTION: In the method for measuring potential waveform by connecting an observation object area of the potential waveform is connected to the LVP (laser voltage probe) measuring element 101 to perform LVP measurement with the LVP measuring element 101 as a laser irradiating position, the LVP measuring element 101 has a MOS capacitor structure, in which the potential waveform of an observation area is applied to a drain diffusion area 103 and a source diffusion area 105, and the potential waveform of reverse logic to the observation area is applied to a gate 107. The band gap of a channel surface A-A' of the element 101 is changed as 121 and 123 in accordance with the logic transition of the observation area, whereby the aspect of change of light absorptivity by generation of Franz-Keldysh effect is observed by LVP measurement.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种方法和装置,该方法和装置通过使得能够响应于信号电压幅度的减小和元件尺寸的收缩的响应,来通过激光电压探针来方便地测量电位波形。电位波形的观察对象区域连接到LVP(激光电压探针)测量元件101,以LVP测量元件101作为激光照射位置进行LVP测量,LVP测量元件101具有MOS电容器结构,其中将观察区的电位波形施加到漏极扩散区103和源极扩散区105,并将与观察区反向逻辑的电位波形施加到栅极107。沟道表面AA'的带隙元件101根据观察区域的逻辑转变而被改变为121和123,由此光吸收率改变的方面为通过LVP测量观察到Franz-Keldysh效应的产生。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006133112A

    专利类型

  • 公开/公告日2006-05-25

    原文格式PDF

  • 申请/专利权人 NEC ELECTRONICS CORP;

    申请/专利号JP20040323459

  • 发明设计人 NONAKA JUNPEI;

    申请日2004-11-08

  • 分类号G01R31/302;G01N21/27;

  • 国家 JP

  • 入库时间 2022-08-21 21:54:33

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