首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE WHICH PERFORM MASKING OF DATA WRITTEN IN PART OF AREA OF MEMORY CELL ARRAY WHEN WRITE OPERATION, AND ITS MASKING METHOD

SEMICONDUCTOR MEMORY DEVICE WHICH PERFORM MASKING OF DATA WRITTEN IN PART OF AREA OF MEMORY CELL ARRAY WHEN WRITE OPERATION, AND ITS MASKING METHOD

机译:在写入操作中执行部分存储在存储单元阵列区域中的数据的数据存储的半导体存储器及其存储方法

摘要

PPROBLEM TO BE SOLVED: To provide a semiconductor memory device which performs masking of data written in a part of an area of a memory cell array, and its masking method. PSOLUTION: A semiconductor memory device is characterized in that it is provided with a memory cell array, a row address buffer, a column address buffer, a write protection circuit, and a column decoder. The write protection circuit is enabled or disabled responding to a first control signal, and when enabled, it outputs a masking control signal responding to a row address signal, a second strobe signal, and a second control signal. Responding to the masking control signal, the column decoder decodes the column address signal and enables or disables a column selection line corresponding to a column address signal decoded in the memory cell array. Thereby, the part area which is going to be protected by the memory cell array can be prevented from being written incorrect data. PCOPYRIGHT: (C)2006,JPO&NCIPI
机译:

要解决的问题:提供一种半导体存储器件及其掩蔽方法,该半导体存储器件对在存储单元阵列的一部分区域中写入的数据进行掩蔽。解决方案:半导体存储器件的特征在于,其具有存储单元阵列,行地址缓冲器,列地址缓冲器,写保护电路和列解码器。响应于第一控制信号使能或禁止写保护电路,并且当使能时,其响应于行地址信号,第二选通信号和第二控制信号而输出掩蔽控制信号。响应于屏蔽控制信号,列解码器对列地址信号进行解码,并且启用或禁用与在存储单元阵列中解码的列地址信号相对应的列选择线。由此,可以防止将要由存储单元阵列保护的部分区域被写入不正确的数据。

版权:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2005322390A

    专利类型

  • 公开/公告日2005-11-17

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO LTD;

    申请/专利号JP20050126891

  • 发明设计人 SOHN HAN-GU;KIN SEISHIN;

    申请日2005-04-25

  • 分类号G11C16/02;

  • 国家 JP

  • 入库时间 2022-08-21 21:53:42

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