METHOD OF PREPARING SILICON DIOXIDE LAYER BY HIGH-TEMPERATURE OXIDATION ON SUBSTRATE HAVING GERMANIUM OR SILICON-GERMANIUM ALLOY ON AT LEAST ITS SURFACE

摘要

PPROBLEM TO BE SOLVED: To provide a method of forming an SiOSB2/SBfilm, in which germanium is not mixed by a high-temperature oxidation on the surface of an SiGe substrate. PSOLUTION: The method is for preparing the silicon oxide layer by the high-temperature oxidation on the substrate expressed by the formula SiSB1-x/SBGeSBx/SB, wherein x is larger than 0 and smaller than 1. The method comprises (a) a step where at least one additional layer 13 where the thickness is hSBy/SB, and the general Formula is SiSB1-y/SBGeSBy/SB(wherein y is larger than 0 and smaller than x) is coated on the substrate 12 expressed by the Formula SiSB1-x/SBGeSBx/SB; and (b) a step where the high-temperature oxidation is performed on the layer 13 where the general Formula is SiSB1-y/SBGeSBy/SB, and a step where the layer 13 is completely or partially converted into a silicon oxide SiOSB2/SBlayer 14 by the continuous steps (a) and (b). PCOPYRIGHT: (C)2006,JPO&NCIPI