METHOD OF GROWING CRYSTALLINE GALLIUM NITRIDE-BASED COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING GALLIUM NITRIDE-BASED COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a method of growing crystalline GaN-based materials that can compensate the lattice mismatch with the substrate and also exhibit improved characteristics such as reduced absorption of ultraviolet radiation.;SOLUTION: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed by forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of Al_xIn_yGa_(1-x-y) N. Subsequently, a layer of a crystalline GaN-based compound is epitaxially grown on the second nucleation layer.;COPYRIGHT: (C)2006,JPO&NCIPI