DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER MODULE EMPLOYING IT

摘要

PROBLEM TO BE SOLVED: To provide a DFB laser capable of obtaining an output essentially obtainable upon laser oscillation.;SOLUTION: In the DFB laser 1 having an MQW-SCH active layer 4 and a grating provided on the MQW-SCH active layer 4 in a lamination structure provided on an n-type semiconductor substrate 2, a difference is more than 150 meV between the oscillation wavelength of the DFB laser 1 and the wavelength of a compound semiconductor band gap constituting the grating layer 6 of the grating. Here, a high refractive index semiconductor material is made to correspond to a semiconductor material having the smallest band gap energy among semiconductor materials constituting the grating.;COPYRIGHT: (C)2006,JPO&NCIPI