PASSIVATION FILM FORMING METHOD AND PASSIVATION FILM STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a passivation film forming method and a passivation film structure of a semiconductor device, capable of markedly reducing the leakage current between a selecting source line and a common source line.;SOLUTION: This invention is characterized by forming a passivation film of the semiconductor device, comprising the steps of: forming a metal wiring on a semiconductor substrate; forming on the metal wiring a buffer oxide film of a first passivation film capable of cushioning damages caused by plasma; forming a high-density plasma (HDP) film of a second passivation film on the buffer oxide film; and forming a third passivation film on the secondary passivation film.;COPYRIGHT: (C)2006,JPO&NCIPI