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The GaAs thin-shaped die/di which has copper back metal structure

机译:具有铜背面金属结构的GaAs薄形管芯/二

摘要

In the thin-shaped GaAs baseplate (310) providing copper back metal layer (340), using former plastic packaging technology, the packaging try to be able do the GaAs baseplate. Because the GaAs baseplate can be made thin under 2 mils (approximately 50 microns) by providing copper back metal layer in the GaAs baseplate, it can lighten the problem of thermal radiation, it is possible at the same time to apply soft solder technology to the semiconductor die/di. It is possible to decrease cost largely, by making the packaging of the semiconductor die/di to the plastic package possible.
机译:在使用先前的塑料包装技术的,提供铜背面金属层(340)的薄形GaAs基板(310)中,包装试图能够制成GaAs基板。由于通过在GaAs基板中提供铜背面金属层,可以使GaAs基板的厚度减薄到2密耳(约50微米),因此可以减轻热辐射的问题,因此可以同时在基板上应用软焊料技术半导体芯片通过使半导体芯片/ di封装到塑料封装中成为可能,可以大大降低成本。

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