The silicone film, being silicone film formation manner, and the silicone film which was formed

摘要

PROBLEM TO BE SOLVED: To provide a silicon film, a forming method thereof, etc., capable of preventing the punch-through of a boron ion when the ion is implanted in manufacturing a semiconductor device.;SOLUTION: A silicon film 110 is obtained by forming a pillar part 103 with a H₂ gas content, for example, being 0%, after a granular part 102 is formed on a base layer 101 of a wafer W, with monosilane gas or disilane gas as reactive gas, by a CVD method with the H₂ gas content in carrier gas, for example, being 40%, and a film-forming temperature being 720°C. With the use of the silicon film 110, the boron ion implanted from above the pillar part 103 in a later process is suppressed from moving/diffusing at the interface between the granular part 102 and the pillar part 103, thus punch-through to the base layer 101 side is prevented.;COPYRIGHT: (C)2003,JPO