The n doping Si and Te simultaneously die GaP monocrystal substrate, the production manner, as a dopant of the epitaxial substrate and

摘要

PROBLEM TO BE SOLVED: To provide an n-type GaP single crystal substrate capable of being suitably used to manufacture a green light emitting diode capable of driving on a low forward voltage with high luminance and to provide a method for manufacturing the same.;SOLUTION: In the n-type GaP single crystal substrate in which Si and T are simultaneously doped as n-type dopants, the sum of an Si concentration and a Te concentration in the n-type GaP single crystal substrate is set to 2×10¹⁷ to 2×10¹⁸ cm^-3, the Si concentration is set to 2×10¹⁶ to 8×10¹⁷ cm^-3, and the Te concentration is set to 1×10¹⁷ to 2×10¹⁷ cm^-3.;COPYRIGHT: (C)2002,JPO