The sacrifice layer formation process which forms sacrifice layer

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of demonstrating large strength and a manufacture. SOLUTION: A manufacture is provided with a sacrifice layer formation process for forming a sacrifice layer on a semiconductor substrate, a membrane formation process for forming a nitride film 4 for coating the sacrifice layer, an etching hole formation process for forming an opening passed through the nitride film 4, an oxidation process for oxidizing a part of the sacrifice layer through the opening and forming an oxidized film 5, the etching hole formation process for forming an etching hole 12 communicated with the opening and passed through the oxidized layer 5 at least to the sacrifice layer, and a space formation process for etching the sacrifice layer and the semiconductor substrate through the etching hole 12 and forming a space 1A between the nitride film 4 and the semiconductor substrate.